ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Effects of W Doping on the Metal-Insulator Transition in Vanadium Dioxide Film
Cited 33 time in scopus Download 0 time Share share facebook twitter linkedin kakaostory
저자
채병규, 김현탁
발행일
201001
출처
Physica B : Condensed Matter, v.405 no.2, pp.663-667
ISSN
0921-4526
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.physb.2009.09.083
협약과제
09MB2300, 전기적 점프(Current Jump)를 이용한 신소자 기술, 김현탁
초록
V1 - x Wx O2 thin films with various W concentrations were successfully deposited on sapphire by the sol-gel method to investigate the effects of W doping on the transition properties. All the films are grown to be (0 4 0)-preferred orientation and have well-formed grains. The transition temperature (Tc) is significantly reduced with increasing W concentration and the rate of Tc reduction reaches to 13.8 K per 1 at% W. The resistivity in the insulator state clearly decreases with doping amount due to the enhancement of the charge carriers. The doped-films have well-formed impurity level with an activation energy of 0.08 eV from the bottom of the conduction band. The excited charge carriers to the conduction band on the verge of the transition should play a role in the insulator-to-metal transition for the V1 - x Wx O2 film. The generated free carriers screen the Coulomb repulsion of the electrons and lead to the metallic state. © 2009 Elsevier B.V. All rights reserved.
키워드
Electron correlation, Metal-insulator transition, V W O thin film 1 - x x 2, W doping
KSP 제안 키워드
Activation Energy, Charge carriers, Coulomb repulsion, Doping amount, Free carriers, Impurity level, Metallic state, Vanadium dioxide films, W doping, conduction band, electron correlation