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학술지 “See-Through” Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel
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저자
윤성민, 양신혁, 변춘원, 정순원, 박상희, 조두희, 유민기, 권오상, 김병훈, 황치선, 조경익
발행일
201105
출처
한국물리학회, v.58 no.5, pp.1494-1499
ISSN
0374-4884
출판사
한국물리학회
DOI
https://dx.doi.org/10.3938/jkps.58.1494
협약과제
11MB2300, 고품위 Plastic AMOLED 원천기술 개발, 유병곤
초록
We proposed and fabricated a transparent nonvolatile memory thin-film transistor (T-MTFT). The T-MTFT was composed of a ferroelectric copolymer gate insulator of poly(vinylidene fluoridetrifluoroethylene) [P(VDF-TrFE)] and an oxide semiconducting active channel of amorphous Al-Zn-Sn-O (AZTO). The fabrication procedures were so designed as to have both good transparency and high performances even at a low process temperature below 200 °C. Consequently, the memory window with a gate voltage sweep of-10 to 10 V, the field-effect mobility in the linear region, the subthreshold swing, the on/off ratio, and the gate leakage current were obtained to be 8.6 V, 32.2 cm2 V-1쨌s-1, 0.45 V/dec, 108, and 10-12 A, respectively. Although the photo-response and the retention behaviors should be more improved and optimized, all these obtained characteristics were very promising for the future transparent electronics. PACS numbers: 73.40.Qv, 77.80.-e, 85.30.-z, 85.30.Tv, 85.50.Gk.
키워드
Ferroelectric copolymer, Nonvolatile memory, Oxide semiconductor DOI: 10.3938/jkps.58.1494, Thin-film transistor, Transparent
KSP 제안 키워드
77.80.-e, Active channel, Al-Zn, Gate insulator, Non-Volatile Memory(NVM), Oxide semiconductor, Photo response, Process temperature, Thin-Film Transistor(TFT), Transparent electronics, VDF-TrFE