상세정보
학술지
Enhanced Photo-Assisted Electrical Gating in Vanadium Dioxide based on Saturation-Induced Gain Modulation of Erbium-Doped Fiber Amplifier
- 발행일
- 200910
- 출처
- Optics Express, v.17 no.22, pp.19605-19610
- ISSN
- 1094-4087
- 출판사
- Optical Society of America(OSA)
- 협약과제
- 09MB2300, 전기적 점프(Current Jump)를 이용한 신소자 기술, 김현탁
- 초록
- By incorporating saturation-induced gain modulation of an erbium-doped fiber amplifier (EDFA), we have demonstrated a high-speed photo-assisted electrical gating with considerably enhanced switching characteristics in a two-terminal device fabricated by using vanadium dioxide thin film. The gating operation was performed by illuminating the output light of the EDFA, whose transient gain was modulated by adjusting the chopping frequency of the input light down to 1 kHz, onto the device. In the proposed gating scheme, gated signals with a temporal duration of -40 s were successively generated at a repetition rate of 1 kHz. © 2009 Optical Society of America.
- KSP 제안 키워드
- Chopping frequency, Gain modulation, High Speed, Photo-assisted, Repetition rate, Temporal duration, Two-terminal device, Vanadium dioxide thin film, electrical gating, switching characteristics, thin film(TF)