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학술지 Enhanced Photo-Assisted Electrical Gating in Vanadium Dioxide based on Saturation-Induced Gain Modulation of Erbium-Doped Fiber Amplifier
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저자
이용욱, 김봉준, 최성열, 이용완, 김현탁
발행일
200910
출처
Optics Express, v.17 no.22, pp.19605-19610
ISSN
1094-4087
출판사
Optical Society of America(OSA)
DOI
https://dx.doi.org/10.1364/OE.17.019605
협약과제
09MB2300, 전기적 점프(Current Jump)를 이용한 신소자 기술, 김현탁
초록
By incorporating saturation-induced gain modulation of an erbium-doped fiber amplifier (EDFA), we have demonstrated a high-speed photo-assisted electrical gating with considerably enhanced switching characteristics in a two-terminal device fabricated by using vanadium dioxide thin film. The gating operation was performed by illuminating the output light of the EDFA, whose transient gain was modulated by adjusting the chopping frequency of the input light down to 1 kHz, onto the device. In the proposed gating scheme, gated signals with a temporal duration of -40 s were successively generated at a repetition rate of 1 kHz. © 2009 Optical Society of America.
KSP 제안 키워드
Chopping frequency, Gain modulation, High Speed, Photo-assisted, Repetition rate, Temporal duration, Two-terminal device, Vanadium dioxide thin film, electrical gating, switching characteristics, thin film(TF)