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학술지 A 1-12-GHz Variable-Gain Low-Noise Amplifier MMIC Using 0.25-μm SiGe BiCMOS Technology
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저자
장우진, 이상흥, 문재경, 남은수
발행일
201208
출처
Microwave and Optical Technology Letters, v.54 no.8, pp.1935-1937
ISSN
0895-2477
출판사
John Wiley & Sons
DOI
https://dx.doi.org/10.1002/mop.26936
협약과제
12VB1500, 차세대 데이터센터용 에너지절감 반도체 기술, 남은수
초록
This article introduces an 1-12-GHz differential two-stage variable-gain low-noise amplifier (VGLNA) using 0.25-μm SiGe:C BiCMOS commercial process technology for ultra-wideband system.The results of the fabricated monolithic microwave integrated circuit amplifier show 18-dB gain with a 3-dB frequency band of 1.3-11.9 GHz and noise figure of less than 5 dB under the bias condition of 2.5-V supply voltage and 55-mW total dc power consumption. The gain-control range is from -17 dB to +18 dB. The chip size of the manufactured VGLNA is 1.1 × 0.9 mm 2 including all testing pads for RF and dc probes. © 2012 Wiley Periodicals, Inc.
키워드
BiCMOS, microwave monolithic integrated circuit, silicon-germanium, ultra-wideband, variable-gain low-noise amplifier
KSP 제안 키워드
Control range, Dc power, Microwave monolithic integrated circuits(MMIC), Noise Figure(NF), Power Consumption, SiGe BiCMOS technology, Silicon-germanium(SiGe), Supply voltage, Two-Stage, Ultra-Wide Band(UWB), frequency band