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적외선 마이크로 볼로미터를 위한 Si1-xSbx 박막의 특성
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- Issue Date
- 2009-09
- Citation
- 반도체 및 디스플레이장비학회지, v.8, no.3, pp.13-17
- ISSN
- 1738-2270
- Publisher
- 한국반도체및디스플레이장비학회
- Language
- Korean
- Type
- Journal Article
- Project Code
- 09MB1600, Development of CMOS based MEMS processed multi-functional sensor for ubiquitous environment, Chang Auck Choi
- Abstract
- we have studied characterization of microbolometer based on the co-sputtered silicon-antimony (Si1-xSbx) thin film for infrared microbolometer. We have investigated the resistivity and the temperature coefficient of resistance (TCR) with annealing. We deposited the films using co-sputtering method at 200℃ in the Ar environment. The Sb concentration has been adjusted by applying variable DC power from Sb targets. TCR of deposited Si1-xSbx films have been measured the range of -2.3 ~ -2.8 %/K. The resistivity of the film is low but TCR is higher than the other bolometer materials. Resistivity of the films has not been affected hugely according to the low annealing temperature however the resistivity has been dramatically decreased over 250℃. It is caused of a phase change due to the rearrangement of Si and Sb atoms during crystallization process of the films.
- KSP Keywords
- Co-sputtered, Co-sputtering method, Dc power, Low annealing temperature, Phase change, crystallization process, temperature coefficient of resistance(TCR), thin film(TF)