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학술지 Etching Characteristics and Mechanism of Ga-doped ZnO Thin Films in Inductively-Coupled HBr/X (X = Ar, He, N2, O2) Plasmas
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저자
함용현, A. Efremov, 이현우, 윤선진, 민남기, 백규하, 도이미, 권광호
발행일
201104
출처
Vacuum, v.85 no.11, pp.1021-1025
ISSN
0042-207X
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.vacuum.2011.03.009
초록
We investigated the etch characteristics and mechanisms of Ga-doped ZnO (Ga-ZnO) thin films in HBr/X (X = Ar, He, N2, O2) inductively-coupled plasmas. The etch rates of Ga-ZnO thin films were measured as a function of the additive gas fraction in the range of 0-100% for Ar, He, N2, and O2 at a fixed gas pressure (6 mTorr), input power (700 W), bias power (200 W), and total gas flow rate (40 sccm). The plasma chemistry was analyzed using a combination of the global (zero-dimensional) plasma model and Langmuir probe diagnostics. By comparing the behavior of the etch rate and fluxes of plasma active species, we found that the Ga-ZnO etch process was not limited by ion-surface interaction kinetics and appeared in the reaction rate-limited etch regime. In the HBr/O2 plasma, the etch kinetics were probably influenced by oxidation of the etched surface. © 2011 Elsevier Ltd. All rights reserved.
키워드
Etch mechanism, Etch rate, Ga-ZnO, HBr-based plasma
KSP 제안 키워드
Additive gas, Etch characteristics, Etch mechanism, Etch rates, Etched surface, Etching characteristics, Ga-ZnO, Ga-doped ZnO thin films, Gas Pressure, Gas fraction, HBr-based plasma