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Journal Article
Low Temperature Grown Polycrystalline La0.7Sr0.3MnO3 thin Films on Amorphous SiO2 Substrates by Rf Magnetron Sputtering
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- Authors
- Sun Gyu Choi, A. Sivasankar Reddy, Hyung Ho Park, Woo Seok Yang, Ho Jun Ryu, Byoung Gon Yu
- Issue Date
- 2009-11
- Citation
- Journal of Vacuum Science and Technology A, v.27, no.4, pp.595-600
- ISSN
- 0734-2101
- Publisher
- American Vacuum Society (AVS)
- Language
- English
- Type
- Journal Article
- Abstract
- The La0.7 Sr0.3 Mn O3 thin films have been prepared on amorphous Si O2 substrates by a rf magnetron sputtering technique under various oxygen flow rates and rf powers at a relatively low substrate temperature of 350 °C. The effects of oxygen flow rate and rf power on their physical properties were systematically investigated. X-ray diffraction results show that the growth orientation and crystallinity of the films were affected by rf power and oxygen flow rate. The electrical resistivity of the films was reduced with increasing oxygen flow rate and rf power due to enhanced {100} growth plane orientation and enlarged grain size of the films. In addition, a relatively high temperature coefficient of resistance value of -2.4% was obtained in the present investigation even with low deposition temperature. © 2009 American Vacuum Society.
- KSP Keywords
- Grain Size, High Temperature, Low deposition temperature, Low substrate temperature, Oxygen flow rate, Physical Properties, RF Power, RF magnetron sputtering technique, X-ray Diffraction, amorphous Si, electrical resistivity