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학술지 Microscopic Origin of Bipolar Resistive Switching of Nanoscale Titanium Oxide thin Films
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저자
정후영, 이정용, 최성율, 김정원
발행일
200911
출처
Applied Physics Letters, v.95 no.16, pp.162108-1-162108-3
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.3251784
협약과제
08IB2300, 고신뢰성 charge complex 소재 탐색, 최성율
초록
We report a direct observation of the microscopic origin of the bipolar resistive switching behavior in nanoscale titanium oxide films. Through a high-resolution transmission electron microscopy, an analytical transmission electron microscopy technique using energy-filtering transmission electron microscopy, and an in situ x-ray photoelectron spectroscopy, we demonstrated that the oxygen ions piled up at the top interface by an oxidation-reduction between the titanium oxide layer and the top Al metal electrode. We also found that the drift of oxygen ions during the on/off switching induced the bipolar resistive switching in the titanium oxide thin films. © 2009 American Institute of Physics.
KSP 제안 키워드
Analytical transmission electron microscopy, Bipolar resistive switching behavior, Direct observation, Oxidation-reduction, Oxide layer, Oxide thin films, Oxygen ions, Titanium oxide film, Transmission Electron Microscopy(TEM), energy-filtering transmission electron microscopy, high-resolution transmission electron microscopy