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Journal Article
Hydrogen Defect Passivation of Silicon Transistor on Plastic for High Performance Flexible Device Application
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- Authors
- Musarrat Hasan, Sun Jin Yun, Jae Bon Koo, Sang Hee Ko Park, Yong Hae Kim, Seung Youl Kang, Jong Hyun Rho, Jee Hoon Kim, Ho Uk Jang, Jong Hyun Ahn, Min Seok Jo, Hyun Sang Hwang
- Issue Date
- 2010-12
- Citation
- Electrochemical and Solid-State Letters, v.13, no.3, pp.H80-H82
- ISSN
- 1099-0062
- Publisher
- Electrochemical Society (ECS)
- Language
- English
- Type
- Journal Article
- Project Code
- 09MB2800, Development of mobile flexible IOP platform, Cho Kyoung Ik
- Abstract
- The electrical characteristics of a transistor on a transferred silicon ribbon are demonstrated. The process temperature is limited to 200째 C for potential use on plastic sheets. Additional hydrogen annealing reduces the threshold voltage and improves the transistor properties. A high mobility of around 160 cm2 /V s, with a high on/off ratio and an off current of as low as < 1011 A, is achieved. The flexibility of the device is evaluated after applying stress in the bended condition. The device shows very little change in properties with a bending radius <4 mm. Overall, good electrical and mechanical properties are demonstrated for future use on flexible device applications. © 2009 The Electrochemical Society.
- KSP Keywords
- Bending radius, Defect passivation, High Mobility, High performance, Hydrogen annealing, Mechanical properties(PMCs), Off Current, Process temperature, Silicon ribbon, change in properties, device applications