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학술지 Chalcogen based thin Film Transistor using CuInSe2 Photo-Active Layer
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저자
김경암, 송기봉, 김준호, 조규만
발행일
200911
출처
Current Applied Physics, v.9 no.6, pp.1326-1329
ISSN
1567-1739
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.cap.2009.01.024
초록
We propose chalcogen-based photo-thin film transistor (P-TFT) using CuInSe2 (CIS) homo-junction. By using a tri-layer process, we fabricated n- and p-type CIS films. Optical and electrical properties of the fabricated CIS films are measured to be suitable for homo-junction. For the fabrication of a P-TFT, n-type CIS generating higher photo current was used for a channel layer whereas p-type CIS with higher carrier density was used for source and drain. The fabricated transistor exhibited typical transistor operation of p-channel enhancement mode and current increase with light. © 2009 Elsevier B.V. All rights reserved.
키워드
Chalcogen, CuInSe 2, Homo-junction, Photo TFT
KSP 제안 키워드
Active Layer, CIS films, Carrier density, Channel layer, CuInSe 2, N-type, Optical and electrical properties, P-Channel, Source and drain, Thin-Film Transistor(TFT), Tri-layer