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학술지 Transparent Flexible Resistive Random Access Memory Fabricated at Room Temperature
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저자
서중원, 박재우, 임굉수, 강상중, 홍윤호, 양지환, 황리안, 성건용, 김한기
발행일
200912
출처
Applied Physics Letters, v.95 no.13, pp.1-4
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.3242381
협약과제
09MC3300, 프로그램 가능한 바이오 CMOS 전계형 소자, 성건용
초록
We report the room temperature fabrication of highly transparent and flexible resistive random access memory devices based on an ITO (indium tin oxide)/ZnO (zinc oxide)/ITO/Ag/ITO capacitor structure on a polyethersulfone flexible substrate. The ITO/Ag/ITO multilayered bottom electrode provides superior flexibility as well as high transparency compared to devices with ITO single bottom electrode during repetitive bending tests. The devices exhibit a high transmittance and the excellent reliability of data retention. Moreover, they show consistent memory performance, even under thermal stress. The results of this study provide a breakthrough solution for the era of transparent and flexible electronic systems in the near future. © 2009 American Institute of Physics.
KSP 제안 키워드
Bottom electrode, Flexible electronics, Flexible substrate, High transmittance, High transparency, Memory performance, Resistive Random Access Memory(RRAM), Zinc oxide(ZnO), bending test, data retention, electronic system