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학술지 Phase-Transition Driven Memristive System
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저자
T.Driscoll, 김현탁, 채병규, M. Di Ventra, D.N. Basov
발행일
200912
출처
Applied Physics Letters, v.95 no.4, pp.1-4
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.3187531
협약과제
09MB2300, 전기적 점프(Current Jump)를 이용한 신소자 기술, 김현탁
초록
Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response in a thin film of vanadium dioxide. This behavior is driven by the insulator-to-metal phase transition typical of this oxide. We discuss details of this form of phase-change memristance and potential applications of our device. Most importantly, our results demonstrate the potential for a realization of memristive systems based on phase-transition phenomena. © 2009 American Institute of Physics.
KSP 제안 키워드
Metal phase, Phase change, Phase transition, Potential applications, memristive system, passive circuits, thin film(TF), vanadium dioxide