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Dependence of Cu(In,Ga)Se2 Solar Cell Performance on Cd Solution Treatment Conditions
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- Authors
- Sang-Wook Park, Soon-Yong Park, Eun-Woo Lee, Woo-Jin Jung, Chan-Wook Jeon, Yong-Duck Chung, Nae-Man Park, Jeha Kim
- Issue Date
- 2011-10
- Citation
- Molecular Crystals and Liquid Crystals, v.551, no.1, pp.221-227
- ISSN
- 1542-1406
- Publisher
- Taylor & Francis
- Language
- English
- Type
- Journal Article
- Abstract
- In the current study, chemical bath deposition (CBD) was used to grow CdS thin films on a Cu(In,Ga)Se2 (CIGS) absorption layer, in order to examine the effects of CdS deposition conditions on the properties of CIGS solar cell devices. The dip time leading up to the start of CdS synthesis is thought to be an important process variable determining the concentration of Cd ions diffused into the CIGS as well as the condition of the CIGS surface. Accordingly, the behavior of the CIGS solar cell efficiency variation was observed while different dip times were applied, at 4, 15 and 30 minutes, respectively. When the dip time was extended, the series resistance (Rs) of the device fell by a substantial margin, leading to improved photoelectric conversion efficiency and enhanced uniformity in device properties. This can be attributed to the effect of CIGS surface cleaning by the NH4OH contained in the reaction solution. © 2011 Taylor & Francis Group, LLC.
- KSP Keywords
- Absorption layer, CIGS solar cell, CdS thin films, Chemical bath deposition(CBD), Conversion efficiency(C.E.), Deposition conditions, Device properties, Photoelectric conversion efficiency, Solar cell efficiency, Solar cell performance, Solution treatment