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Journal Article Improved Performance Uniformity of Inkjet Printed N-channel Organic Field-effect Transistors and Complementary Inverters
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Authors
Kang-Jun Baeg, Dongyoon Khim, Ju-Hwan Kim, Minji Kang, In-Kyu You, Dong-Yu Kim, Yong-Young Noh
Issue Date
2011-04
Citation
Organic Electronics, v.12, no.4, pp.634-640
ISSN
1566-1199
Publisher
Elsevier
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1016/j.orgel.2011.01.016
Abstract
In the present study, we demonstrate inkjet-printed n-type organic field-effect transistors (OFETs) and their complementary inverters with high performance uniformity, using soluble N,N??-bis(n-octyl)-(1,7&1,6)- dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI8-CN2). The device performance and uniformity were improved by ink-jet printing a PDI8-CN 2 solution onto a heated substrate (60 °C). The printed features, which were discontinuous crystalline films at RT, were uniform films when the substrate temperature was increased to 60 °C. Optimized n-channel PDI8-CN2 FETs showed a high field-effect mobility of 0.05-0.06 cm2/Vs, a high on/off ratio of ~106, and a high uniformity that was within 10% with a bottom-gate/bottom-contact device configuration. Inkjet-printed organic complementary inverters were constructed by direct inkjet-printing of n-channel (PDI8-CN2) and p-channel (6,13-bis(triisopropyl-silylethynyl)-pentacene or poly(3-hexylthiophene)) organic semiconductors onto silicon dioxide gate dielectrics. The inkjet-printed organic complementary inverters exhibited a high voltage gain of more than 15 and small standard deviation of inverting voltage and gain of 짹0.95 V and 짹0.56, respectively, for measuring 12 samples from four difference batches. © 2011 Elsevier B.V. All rights reserved.
KSP Keywords
Bottom contact, Bottom gate, Contact device, Crystalline films, Device configuration, Field Effect Transistor(FET), Heated substrate, High performance, High uniformity, High voltage gain, Improved performance