상세정보
학술지
Improved Performance Uniformity of Inkjet Printed N-channel Organic Field-effect Transistors and Complementary Inverters
- 발행일
- 201104
- 출처
- Organic Electronics, v.12 no.4, pp.634-640
- ISSN
- 1566-1199
- 출판사
- Elsevier
- 초록
- In the present study, we demonstrate inkjet-printed n-type organic field-effect transistors (OFETs) and their complementary inverters with high performance uniformity, using soluble N,N??-bis(n-octyl)-(1,7&1,6)- dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI8-CN2). The device performance and uniformity were improved by ink-jet printing a PDI8-CN 2 solution onto a heated substrate (60 °C). The printed features, which were discontinuous crystalline films at RT, were uniform films when the substrate temperature was increased to 60 °C. Optimized n-channel PDI8-CN2 FETs showed a high field-effect mobility of 0.05-0.06 cm2/Vs, a high on/off ratio of ~106, and a high uniformity that was within 10% with a bottom-gate/bottom-contact device configuration. Inkjet-printed organic complementary inverters were constructed by direct inkjet-printing of n-channel (PDI8-CN2) and p-channel (6,13-bis(triisopropyl-silylethynyl)-pentacene or poly(3-hexylthiophene)) organic semiconductors onto silicon dioxide gate dielectrics. The inkjet-printed organic complementary inverters exhibited a high voltage gain of more than 15 and small standard deviation of inverting voltage and gain of 짹0.95 V and 짹0.56, respectively, for measuring 12 samples from four difference batches. © 2011 Elsevier B.V. All rights reserved.
- 키워드
- Conjugated molecule, Inkjet printing, Organic field-effect transistors
- KSP 제안 키워드
- 3-hexylthiophene(SEM poly), Bottom contact, Bottom gate, Conjugated molecules, Contact device, Crystalline films, Device configuration, Field effect transistors(Substrate temperature), Field-effect transistors(FETs), Heated substrate, High Voltage Gain