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Low-voltage-operated Top-gate Polymer Thin-film Transistors with High-capacitance P(VDF-TrFE)/PVDF-blended Dielectrics
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- Authors
- Soon-Won Jung, Sung-Min Yoon, Seung Youl Kang, In-Kyu You, Jae Bon Koo, Kang-Jun Baeg, Yong-Young Noh
- Issue Date
- 2011-05
- Citation
- Current Applied Physics, v.11, no.3 Suppl., pp.S213-S218
- ISSN
- 1567-1739
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- We report a poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]/poly(vinylidene fluoride) (PVDF)-blended film as a high-capacitance polymer-gate dielectric layer for a low-voltage-operated top-gate organic field-effect transistor (OFET). OFETs with poly(9,9- dioctylfuorene-co-bithiophene) (F8T2) as an active layer exhibited a low operation gate voltage of less than 10 V with a reasonable field-effect mobility of 10-4 cm2/V for amorphous conjugated polymers. The operation voltage effectively decreased because of the high permittivity of the P(VDF-TrFE)/(PVDF)- blended film (琯 = 10.2). The remnant polarization disappeared completely; further, the hysteresis in the transfer plots induced by the ferroelectric P(VDF-TrFE) was effectively minimized by the disruption of a crystalline 棺-phase in the film via an increase in the blend ratio of PVDF. © 2011 Elsevier B.V. All rights reserved.
- KSP Keywords
- Active Layer, Blend ratio, Conjugated polymer(PFO-co-MEH-PPV), Field Effect Transistor(FET), Gate voltage, High permittivity, Low voltage, Organic field-effect transistor(OFET), Remnant polarization, Thin-Film Transistor(TFT), VDF-TrFE(PZT/P)