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학술지 Low-voltage-operated Top-gate Polymer Thin-film Transistors with High-capacitance P(VDF-TrFE)/PVDF-blended Dielectrics
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저자
정순원, 윤성민, 강승열, 유인규, 구재본, 백강준, 노용영
발행일
201105
출처
Current Applied Physics, v.11 no.3 Suppl., pp.S213-S218
ISSN
1567-1739
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.cap.2011.01.011
협약과제
10MC2900, 개별물품 단위 응용을 위한 차세대 RFID 기술 개발, 채종석
초록
We report a poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]/poly(vinylidene fluoride) (PVDF)-blended film as a high-capacitance polymer-gate dielectric layer for a low-voltage-operated top-gate organic field-effect transistor (OFET). OFETs with poly(9,9- dioctylfuorene-co-bithiophene) (F8T2) as an active layer exhibited a low operation gate voltage of less than 10 V with a reasonable field-effect mobility of 10-4 cm2/V for amorphous conjugated polymers. The operation voltage effectively decreased because of the high permittivity of the P(VDF-TrFE)/(PVDF)- blended film (琯 = 10.2). The remnant polarization disappeared completely; further, the hysteresis in the transfer plots induced by the ferroelectric P(VDF-TrFE) was effectively minimized by the disruption of a crystalline 棺-phase in the film via an increase in the blend ratio of PVDF. © 2011 Elsevier B.V. All rights reserved.
키워드
F8T2, Field-effect transistor, High permittivity, Hysteresis, P(VDF-TrFE), PVDF
KSP 제안 키워드
Active Layer, Blend ratio, Conjugated polymer(PFO-co-MEH-PPV), Field-effect transistors(FETs), High permittivity, Organic field-effect, Remnant polarization, Thin-Film Transistor(TFT), VDF-TrFE, dielectric layer, field-effect mobility