상세정보
학술지
Green Emission of Silicon Quantum Dot Light-emitting Diodes Caused by Enhanced Carrier Injection
- 발행일
- 201109
- 출처
- Journal of the Korean Physical Society, v.59 no.3, pp.L2183-L2186
- ISSN
- 0374-4884
- 출판사
- 한국물리학회 (KPS)
- 협약과제
- 11ZC1100, 메가컨버전스 핵심기술 개발, 함호상
- 초록
- We have demonstrated green emitting silicon quantum dot (QD) light-emitting diodes (LEDs) using a transparent n-type InGaN doping layer. The current-voltage characteristics have been significantly improved. The intensity of the integrated green electroluminescence has also been increased by 2.54 times compared to that of a reference LED. The enhanced electrical properties and the strong green EL of the QD LED with an InGaN layer are attributed to the excellent carrier injection into the QDs via the transparent InGaN doping layer.
- 키워드
- Electroluminescence, Light-emitting diode, Quantum dot
- KSP 제안 키워드
- Carrier injection, Green emission, Green emitting, InGaN layer, Light-emitting diodes (leds), N-type, Silicon quantum dots, current-voltage characteristics, electrical properties(I-V curve), green electroluminescence, light-emitting diode(LED)