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Journal Article
Green Emission of Silicon Quantum Dot Light-emitting Diodes Caused by Enhanced Carrier Injection
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- Authors
- Baek Hyun Kim, Jae Wan Kwon, Seong-Ju Park, Robert F. Davis, Chul Huh, Gun Yong Sung
- Issue Date
- 2011-09
- Citation
- Journal of the Korean Physical Society, v.59, no.3, pp.L2183-L2186
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- We have demonstrated green emitting silicon quantum dot (QD) light-emitting diodes (LEDs) using a transparent n-type InGaN doping layer. The current-voltage characteristics have been significantly improved. The intensity of the integrated green electroluminescence has also been increased by 2.54 times compared to that of a reference LED. The enhanced electrical properties and the strong green EL of the QD LED with an InGaN layer are attributed to the excellent carrier injection into the QDs via the transparent InGaN doping layer.
- KSP Keywords
- Carrier injection, Electrical properties, Green emitting, InGaN layer, Quantum dot(Qdot), Silicon quantum dots, current-voltage characteristics, green electroluminescence, green emission, n-Type, quantum-dot light-emitting diodes(QLEDs)