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Journal Article Green Emission of Silicon Quantum Dot Light-emitting Diodes Caused by Enhanced Carrier Injection
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Authors
Baek Hyun Kim, Jae Wan Kwon, Seong-Ju Park, Robert F. Davis, Chul Huh, Gun Yong Sung
Issue Date
2011-09
Citation
Journal of the Korean Physical Society, v.59, no.3, pp.L2183-L2186
ISSN
0374-4884
Publisher
한국물리학회 (KPS)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.3938/jkps.59.2183
Abstract
We have demonstrated green emitting silicon quantum dot (QD) light-emitting diodes (LEDs) using a transparent n-type InGaN doping layer. The current-voltage characteristics have been significantly improved. The intensity of the integrated green electroluminescence has also been increased by 2.54 times compared to that of a reference LED. The enhanced electrical properties and the strong green EL of the QD LED with an InGaN layer are attributed to the excellent carrier injection into the QDs via the transparent InGaN doping layer.
KSP Keywords
Carrier injection, Electrical properties, Green emitting, InGaN layer, Quantum dot(Qdot), Silicon quantum dots, current-voltage characteristics, green electroluminescence, green emission, n-Type, quantum-dot light-emitting diodes(QLEDs)