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학술지 Epitaxial Growth of Higher Transition-Temperature VO2 Films on AlN/Si
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저자
테티아나, 조진철, 김봉준, 윤선진, 김현탁
발행일
201602
출처
APL Materials, v.4 no.12, pp.1-7
ISSN
2166-532X
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.4940901
협약과제
15ZE1100, ETRI 창의연구실 사업, 정성영
초록
We report the epitaxial growth and the mechanism of a higher temperature insulator-to-metal-transition (IMT) of vanadium dioxide (VO2) thin films synthesized on aluminum nitride (AlN)/Si (111) substrates by a pulsed-laser-deposition method; the IMT temperature is TIMT ≈ 350 K. X-ray diffractometer and high resolution transmission electron microscope data show that the epitaxial relationship of VO2 and AlN is VO2 (010) ?닪 AlN (0001) with VO2 [101] ?닪 AlN [2 1 1 0] zone axes, which results in a substrate-induced tensile strain along the in-plane a and c axes of the insulating monoclinic VO2. This strain stabilizes the insulating phase of VO2 and raises TIMT for 10 K higher than TIMT single crystal ≈ 340 K in a bulk VO2 single crystal. Near TIMT, a resistance change of about four orders is observed in a thick film of ~130 nm. The VO2/AlN/Si heterostructures are promising for the development of integrated IMT-Si technology, including thermal switchers, transistors, and other applications.
KSP 제안 키워드
130 nm, Aluminum Nitride(AlN), Deposition method, High-resolution transmission electron microscope, In-plane, Pulsed-laser deposition(PLD), Resistance change, Si technology, Single crystal, Thick films, Transmission Electron Microscopy(TEM)