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학술지 High-Performance, Solution-Processed Indium-Oxide TFTs Using Rapid Flash Lamp Annealing
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저자
강찬모, 김훈, 오연화, 백규하, 도이미
발행일
201605
출처
IEEE Electron Device Letters, v.37 no.5, pp.595-598
ISSN
0741-3106
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LED.2016.2545692
협약과제
15PC2500, 150ºC이하 인쇄기반 플렉세블 디스플에이 백플레인용 산화물 반도체, 절연체 잉크소재 및 공정 기술 개발, 도이미
초록
In this letter, we discuss the temperature distribution of light-illuminated Si substrates with time and the successful fabrication of high-performance, solution-processed indium-oxide thin-film transistors within an annealing time of 2 min using a high-power flash lamp under ambient conditions. The precursor films are completely converted into oxide films within 30 s using flash lamp annealing (FLA). As a result, we obtained the high performance of indium-oxide TFTs with the mobility of impressive 38.9 cm2V-1s-1 with the on/off ratio of ~ 104 for the irradiation time of 2 min and the mobility of 10.3 cm2V-1s-1 with the on/off ratio of ~ 5 × 106 for the irradiation time of 10 s for three times, which is the highest mobility ever reported using FLA. This result will be helpful for breaking the barrier in the mass production of the next-generation semiconductors.
키워드
FLA, HPLE, In O 2 3, Oxide TFT, rapid annealing, solution, thin film transistor
KSP 제안 키워드
Annealing time, First Stokes(S1), Flash lamp annealing(FLA), High performance, High power, Irradiation time, Next-generation, Oxide TFTs, Oxide film, Precursor film, Rapid annealing