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학술지 Modeling of Amorphous InGaZnO Thin Film Transistors using an Empirical Mobility Function based on the Exponential Deep and Tail States
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저자
신재헌, 정우석, 황치선, 정승묵
발행일
201203
출처
Thin Solid Films, v.520 no.10, pp.3800-3802
ISSN
0040-6090
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.tsf.2011.06.088
협약과제
10MB6800, 디스플레이용 산화물 반도체 조성 및 고밀도 산화물 반도체 타켓 개발, 정우석
초록
We demonstrate that the voltage-dependent average mobility of In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) can be excellently fitted by an empirical mobility function based on the exponential density of deep and tail states. The proposed mobility function needs only 5 parameters and does not need the concept of the threshold voltage which is inherently ambiguous in amorphous oxide TFTs. Both the transfer and output curves of the device are well reproduced by integrating the mobility function. © 2011 Elsevier B.V. All rights reserved.
키워드
IGZO, Modeling, Oxide TFTs, Thin film transistors
KSP 제안 키워드
Amorphous InGaZnO thin film, Amorphous oxide, In-Ga-Zn-O(IGZO), Oxide TFTs, Thin-Film Transistor(TFT), tail states, thin film(TF), threshold voltage(Vth), voltage-dependent