상세정보
학술지
Pre-Annealing Effect for Low-Temperature, Solution-Processed Indium Oxide Thin-Film Transistors
- 발행일
- 201705
- 출처
- Journal of Nanoscience and Nanotechnology, v.17 no.5, pp.3293-3297
- ISSN
- 1533-4880
- 출판사
- American Scientific Publishers (ASP)
- 협약과제
- 15PC4500, 인쇄 공정을 이용한 40인치 이상의 디지털 사이니지 디스플레이용 TFT array 개발, 백규하
- 초록
- In this study, we improved the electrical performance of low-temperature, solution-processed indium oxide thin-film transistors (fabricated at 200°C) by employing a pre-annealing process. The preannealed films exhibit dense and smooth surfaces in contrast to the rough and large grains found on films without pre-annealing, as determined using atomic force microscopy and transmission electron microscopy. The O 1s peak in X-ray photoelectron spectroscopy shows a higher metal oxide lattice peak obtained by employing the pre-annealing process, which implies stronger electrical transport behavior. Therefore, the overall electrical characteristics of the thin-film transistors are improved by pre-annealing in terms of mobility, on/off ratio, subthreshold swing, and hysteresis.
- 키워드
- Indium Oxide, Low-Temperature, Oxide TFT, Pre-Annealing, Solution-Processed
- KSP 제안 키워드
- Annealing effects, Atomic force microscope(AFM), Electrical transport, Large grain, Low temperature(LT), Metal-oxide(MOX), O 1s, Oxide TFTs, Pre-annealing, Smooth surface, Solution-processed indium oxide