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Journal Article
Pre-Annealing Effect for Low-Temperature, Solution-Processed Indium Oxide Thin-Film Transistors
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- Authors
- Chan-Mo Kang, Hoon Kim, Yeon-Wha Oh, Kyu-Ha Baek, Lee-Mi Do
- Issue Date
- 2017-05
- Citation
- Journal of Nanoscience and Nanotechnology, v.17, no.5, pp.3293-3297
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP)
- Language
- English
- Type
- Journal Article
- Abstract
- In this study, we improved the electrical performance of low-temperature, solution-processed indium oxide thin-film transistors (fabricated at 200°C) by employing a pre-annealing process. The preannealed films exhibit dense and smooth surfaces in contrast to the rough and large grains found on films without pre-annealing, as determined using atomic force microscopy and transmission electron microscopy. The O 1s peak in X-ray photoelectron spectroscopy shows a higher metal oxide lattice peak obtained by employing the pre-annealing process, which implies stronger electrical transport behavior. Therefore, the overall electrical characteristics of the thin-film transistors are improved by pre-annealing in terms of mobility, on/off ratio, subthreshold swing, and hysteresis.
- KSP Keywords
- Annealing effects, Atomic force microscope(AFM), Electrical characteristics, Electrical performance, Electron microscopy(SEM), Metal-oxide(MOX), O 1s, ON/OFF ratio, Pre-annealing, Smooth surface, Solution-processed indium oxide