ETRI-Knowledge Sharing Plaform

KOREAN
논문 검색
Type SCI
Year ~ Keyword

Detail

Journal Article Pre-Annealing Effect for Low-Temperature, Solution-Processed Indium Oxide Thin-Film Transistors
Cited 3 time in scopus Share share facebook twitter linkedin kakaostory
Authors
Chan-Mo Kang, Hoon Kim, Yeon-Wha Oh, Kyu-Ha Baek, Lee-Mi Do
Issue Date
2017-05
Citation
Journal of Nanoscience and Nanotechnology, v.17, no.5, pp.3293-3297
ISSN
1533-4880
Publisher
American Scientific Publishers (ASP)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1166/jnn.2017.14065
Abstract
In this study, we improved the electrical performance of low-temperature, solution-processed indium oxide thin-film transistors (fabricated at 200°C) by employing a pre-annealing process. The preannealed films exhibit dense and smooth surfaces in contrast to the rough and large grains found on films without pre-annealing, as determined using atomic force microscopy and transmission electron microscopy. The O 1s peak in X-ray photoelectron spectroscopy shows a higher metal oxide lattice peak obtained by employing the pre-annealing process, which implies stronger electrical transport behavior. Therefore, the overall electrical characteristics of the thin-film transistors are improved by pre-annealing in terms of mobility, on/off ratio, subthreshold swing, and hysteresis.
KSP Keywords
Annealing effects, Atomic force microscope(AFM), Electrical characteristics, Electrical performance, Electron microscopy(SEM), Metal-oxide(MOX), O 1s, ON/OFF ratio, Pre-annealing, Smooth surface, Solution-processed indium oxide