In this study, we improved the electrical performance of low-temperature, solution-processed indium oxide thin-film transistors (fabricated at 200°C) by employing a pre-annealing process. The preannealed films exhibit dense and smooth surfaces in contrast to the rough and large grains found on films without pre-annealing, as determined using atomic force microscopy and transmission electron microscopy. The O 1s peak in X-ray photoelectron spectroscopy shows a higher metal oxide lattice peak obtained by employing the pre-annealing process, which implies stronger electrical transport behavior. Therefore, the overall electrical characteristics of the thin-film transistors are improved by pre-annealing in terms of mobility, on/off ratio, subthreshold swing, and hysteresis.
KSP Keywords
Annealing effects, Atomic force microscope(AFM), Electrical characteristics, Electrical performance, Electron microscopy(SEM), Metal-oxide(MOX), O 1s, ON/OFF ratio, Pre-annealing, Smooth surface, Solution-processed indium oxide
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