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학술지 Improved Stability of Electrical Properties of Nitrogen-added Al2O3 Films Grown by PEALD as Gate Dielectric
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저자
이다정, 임정욱, 문재경, 윤선진
발행일
201611
출처
Materials Research Bulletin, v.83, pp.597-602
ISSN
0025-5408
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.materresbull.2016.07.008
협약과제
16PB3100, 다층 나노 박막을 이용한 자동차용 고성능 투명 발열소자 개발, 임정욱
초록
The electrical properties of Al2O3 films have been studied as the dielectric materials for electronic devices which require a low leakage current and high breakdown field. In this work, Al2O3 films with various thicknesses (as low as 10??30혻nm) were deposited onto Si substrates by plasma-enhanced atomic layer deposition (PEALD), and current density?? field curves were measured after post-annealing to verify their electrical properties. One thing to note is that, during PEALD, nitrogen gas was introduced to improve the thermal stability of the Al2O3 films. Breakdown field for add-nitrogen Al2O3 of 30혻nm-thick film was enhanced from 6혻MV/cm to 10혻MV/cm as incorporating nitrogen.
키워드
Al O gate dielectric 2 3, Atomic layer deposition, Dielectric materials, Plasma enhanced atomic layer deposition, Remote plasma atomic layer deposition
KSP 제안 키워드
Al O, Dielectric materials, High breakdown field, Improved stability, Plasma-enhanced atomic layer deposition, Post-annealing, Remote plasma, Si substrate, Thermal stability(TGA), Thick films, current density