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학술지 The Effects of Tetramethylammonium Hydroxide Treatment on the Performance of Recessed-gate AlGaN/GaN High Electron Mobility Transistors
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저자
도재원, 정현욱, 신민정, 안호균, 김해천, 김륜휘, 조규준, 장성재, 민병규, 윤형섭, 김지헌, 양진모, 이정희, 임종원
발행일
201704
출처
Thin Solid Films, v.628, pp.31-35
ISSN
0040-6090
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.tsf.2017.02.053
협약과제
16MB1800, 고효율 GaN 기반 기지국/단말기용 핵심부품 및 모듈 개발, 임종원
초록
AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated using a gate recess process and a surface treatment with tetramethylammonium hydroxide (TMAH) prior to gate metal deposition. Electrical characterizations show improved extrinsic transconductance and saturation current, as well as more uniform off-state behavior with reduced off-current by a factor of 3.5 and gate leakage current by a factor of 4.2 in the devices with TMAH treatment. The analyses based on atomic force microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy show that the TMAH treatment effectively reduces the roughness of the recess-etched AlGaN surface and removes the native oxide layer on the AlGaN surface, suggesting a simple and viable route towards the fabrication of gate-recessed HEMTs based on AlGaN/GaN heterostructure with improved controllability and uniformity.
키워드
Alumium gallium nitride, Gallium nitride, Gate recess, High electron mobility transistors, Surface treatment, Tetramethylammonium hydroxide
KSP 제안 키워드
AND gate, AlGaN/GaN heterostructure, Alumium gallium nitride, Atomic force microscope(AFM), Electrical characterization, Gallium Nitride(GaN), Gate recess, High electron mobility transistor(HEMT), Native oxide layer, Off Current, Off-State