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학술지 Pulse-Mode Dynamic Ron Measurement of Large-Scale High-Power AlGaN/GaN HFET
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저자
김민기, 박영락, 박준보, 정동윤, 전치훈, 고상춘
발행일
201704
출처
ETRI Journal, v.39 no.2, pp.292-299
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.17.0116.0385
협약과제
15PB6600, IEEE 802.3bt 대응 Power-over-Ethernet용 2% 이상 효율 증가 60/90W급 Power Sourcing Equipment/Powered Device 개발, 정동윤
초록
We propose pulse-mode dynamic Ron measurement as a method for analyzing the effect of stress on large-scale high-power AlGaN/GaN HFETs. The measurements were carried out under the soft-switching condition (zero-voltage switching) and aimed to minimize the self-heating problem that exists with the conventional hard-switching measurement. The dynamic Ron of the fabricated AlGaN/GaN MIS-HFETs was measured under different stabilization time conditions. To do so, the drain-gate bias is set to zero after applying the off-state stress. As the stabilization time increased from 0.1 μs to 100 ms, the dynamic Ron decreased from 160 廓 to 2 廓. This method will be useful in developing high-performance GaN power FETs suitable for use in high-efficiency converter/inverter topology design.
키워드
Dynamic resistance, GaN-FET
KSP 제안 키워드
AlGaN/GaN HFET, Dynamic Ron, Dynamic resistance, GaN FET, GaN HFETS, High performance, High power, Inverter topology, Self-heating, Soft switching, Switching conditions
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