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학술지 Fin-Width Effects on Characteristics of InGaAs-Based Independent Double-Gate FinFETs
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저자
장성재, Hong Zhou, Nanbo Gong, 강동민, 임종원, Mengwei Si, Peide D. Ye, T. P. Ma
발행일
201704
출처
IEEE Electron Device Letters, v.38 no.4, pp.441-444
ISSN
0741-3106
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LED.2017.2671859
협약과제
17ZB1700, 수요자 중심 화합물 반도체 부품산업기반강화, 강동민
초록
We report the characteristics of InGaAs-based independent double-gate FinFETs with Al2O3/LaAlO3 as gate dielectric. The device can be operated in three different modes (i.e., single-, double-, and independent double-gate) made possible by the physically separated two sidewall gates. When the device is operated in the double-gate mode, it exhibits better performance in terms of the On/Off current ratio, subthreshold swing, Off current, and channel mobility than in the single-gate mode. In addition, independent double-gate operation makes it possible to modulate channel properties by applying a bias at the opposite gate via gate coupling effects. Our systematic measurements reveal that gate control and coupling effects are enhanced with reduced fin width.
키워드
carrier distribution, coupling effects, double-gate, FinFET, InGaAs, MOSFET, threshold voltage modulation
KSP 제안 키워드
Channel properties, Coupling effects, Different modes, Double-gate(DG), Fin width, Gate control, Gate operation, ON/OFF current ratio, carrier distribution, channel mobility, gate coupling