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학술지 Surface Nanostructuring of CuIn1_xGaxSe2 Films using Argon Plasma Treatment
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저자
S P Zimin, E S Gorlachev, D A Mokrov, I I Amirov, V V Naumov, V F Gremenok, R Juskenas, M Skapas, W Y Kim, K Bente, 정용덕
발행일
201707
출처
Semiconductor Science and Technology, v.32 no.7, pp.1-8
ISSN
0268-1242
출판사
Institute of Physics (IOP)
DOI
https://dx.doi.org/10.1088/1361-6641/aa6fd9
협약과제
16JB1600, 무독성 버퍼층을 갖는 다색 플렉서블 박막 태양전지 기술 개발, 정용덕
초록
In this work we report a phenomenon of the self-formation of nanostructure arrays during low-energy inductively coupled argon plasma treatment of the surface of copper indium gallium diselenide films grown by different methods on glass substrates. Selenization, pulsed laser deposition and multistage co-evaporation technological methods were used for the growth of polycrystalline CuIn1-xGaxSe2 (0.04 ?돞 x ?돞 0.45) films. The plasma treatment of the surface of the films grown by all three methods resulted in the plasma-assisted self-formation of arrays of uniform cylindrical or conical nanostructures with the surface density of (0.8-1.8) × 1011 cm-2. Using scanning electron microscopy, transmission electron microscopy and atomic force microscopy, we describe the morphological parameters and chemical composition of the fabricated nanostructures and discuss possible physical mechanisms of the observed plasma-assisted nanostructuring.
키워드
conical nanostructures, copper indium gallium diselenide, cylindrical nanostructures, inductively coupled plasma, polycrystalline films, vapour-liquid-solid mechanism
KSP 제안 키워드
Atomic force microscope(AFM), Different methods, Glass substrate, Inductively-coupled plasma(ICP), Low energy, Morphological parameters, Physical mechanism, Plasma-assisted, Polycrystalline films, Pulsed-laser deposition(PLD), Scanning electron microscopy(S.E.M.)