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학술지 Coupling Two-Dimensional MoTe2 and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters
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저자
이한솔, 최경희, 김진성, 유상혁, 고경록, 임성일
발행일
201705
출처
ACS Applied Materials & Interfaces, v.9 no.18, pp.15592-15598
ISSN
1944-8244
출판사
American Chemical Society(ACS)
DOI
https://dx.doi.org/10.1021/acsami.7b02838
협약과제
16MF1400, 디지털 홀로그래픽 테이블탑형 단말 기술 개발, 김진웅
초록
We report the fabrication of hybrid PN junction diode and complementary (CMOS) inverters, where 2D p-type MoTe2 and n-type thin film InGaZnO (IGZO) are coupled for each device process. IGZO thin film was initially patterned by conventional photolithography either for n-type material in a PN diode or for n-channel of top-gate field-effect transistors (FET) in CMOS inverter. The hybrid PN junction diode shows a good ideality factor of 1.57 and quite a high ON/OFF rectification ratio of ~3 × 104. Under photons, our hybrid PN diode appeared somewhat stable only responding to high-energy photons of blue and ultraviolet. Our 2D nanosheet-oxide film hybrid CMOS inverter exhibits voltage gains as high as ~40 at 5 V, low power consumption less than around a few nW at 1 V, and ~200 μs switching dynamics.
키워드
2D MoTe nanosheet 2, complementary inverter, hybrid device, IGZO thin film, PN junction diode
KSP 제안 키워드
2D nanosheets, CMOS Inverter, Complementary inverter, Field-effect transistors(FETs), Film materials, Hybrid CMOS, IGZO thin film, N-channel, N-type, Oxide film, PN diode