ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Growth of 10 nm-Thick AlIn(Ga)N/GaN Heterostructure with High Electron Mobility and Low Sheet Resistance
Cited 1 time in scopus Download 3 time Share share facebook twitter linkedin kakaostory
저자
김정길, 임기식, 원철호, 강승현, 이상흥, 임종원, 김지헌, 이정희
발행일
201708
출처
Physica Status Solidi (B), v.254 no.8, pp.1-5
ISSN
0370-1972
출판사
Wiley-VCH Verlag GmbH
DOI
https://dx.doi.org/10.1002/pssb.201600731
협약과제
16DB1400, GaN RF 전력증폭 소자 설계 개발, 임종원
초록
We have grown an AlIn(Ga)N/GaN heterostructure which is a promising alternative to the AlGaN/GaN heterostructure. The mobility and the carrier concentration of the two-dimensional electron gas (2DEG) formed at the AlIn(Ga)N/GaN heterointerface were strongly dependent on both the growth temperature and pressure. Two optimized growth conditions for the heterostructure with a low sheet resistance less than 300 廓/sq were obtained by varying the growth temperature and pressure from 750 to 1070 °C and 100 to 300 torr, respectively: (i) AlIn(Ga)N/GaN heterostructure with high 2DEG carrier concentration of 2.4 × 1013 cm?닋2 with mobility of 1010 cm2 V?닋1s?닋1 (grown at 900 °C and 100 torr); (ii) AlIn(Ga)N/GaN heterostructure with high 2DEG mobility of 1910 cm2 V?닋1s?닋1 with carrier concentration of 1.13 × 1013 cm?닋2 (grown at 900 °C and 300 torr). Both structures would be useful for different purpose of device application.
키워드
AlInN, electron mobility, gallium, GaN, heterostructures, MOCVD, sheet resistance
KSP 제안 키워드
AlGaN/GaN heterostructure, Carrier concentration, Growth conditions, High electron mobility, Temperature and pressure, Two-dimensional electron gas(2DEG), device applications, growth temperature, low sheet resistance, two-dimensional(2D)