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학술대회 Investigation of GaN Channel Thickness on the Channel Mobility in AlGaN/GaN HEMTs Grown on Sapphire Substrate
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장성재, Maruf Bhuiyan, 원철호, 이재훈, 정현욱, 신민정, 도재원, 조규준, 이정희, T.P. Ma, 임종원
International Symposium on Radio-Frequency Integration Technology (RFIT) 2017, pp.87-89
17HB2400, 고효율 GaN 기반 기지국/단말기용 핵심부품 및 모듈 개발, 임종원
We have invented a novel channel mobility extraction method in the gated region of AlGaN/GaN high-electron-mobility transistors (HEMTs). The resistances in the contact, gated, and access region were extracted from Id(Vg) measurements on a set of HEMTs with various gate-to-drain distances and gate lengths. By considering the impact of the access and contact resistances, an accurate model to describe the channel mobility behavior in the gated region has been achieved. This channel mobility extraction method has been employed for different GaN channel thickness devices to study the effect of the GaN channel thickness on the device performance. Our systematic measurements have revealed that the channel mobility increases up to a certain channel thickness due to the reduced edge-type dislocation density evidenced by the X-ray diffraction measurement data.
AlGaN/GaN, channel mobility, channel thickness, dislocation density, HEMTs, X-ray diffraction
KSP 제안 키워드
AND gate, Access Region, Accurate model, AlGaN/GaN HEMTs, Channel thickness, Contact resistance(73.40.Cg), Dislocation density, High electron mobility transistor(HEMT), Mobility behavior, Mobility extraction method, Sapphire substrates