상세정보
학술지
A Study on N2O Direct Oxidation Process with Re-oxidation Annealing for the Improvement of Interface Properties in 4H-SiC MOS Capacitor
- 발행일
- 201708
- 출처
- Journal of the Korean Physical Society, v.71 no.3, pp.150-155
- ISSN
- 0374-4884
- 출판사
- 한국물리학회 (KPS)
- 협약과제
- 17ZB1400, SiC 기반 트렌치형 차세대 전력소자 핵심기술 개발, 김상기
- 초록
- The effect of N2O direct oxidation processes with re-oxidation on SiC/SiO2 interface characteristics has been investigated. With different oxidation and post oxidation annealing (POA) processes, the flat-band voltage, effective dielectric charge density, and interface trap density are obtained from the capacitance-voltage curves. For the proposed N2O direct oxidation processes with re-oxidation, oxides were grown in N2O ambient, diluted in high-purity N2 to 10% concentration, for 5 h at 1230 °C. After the growth, some samples were annealed additionally at 1200 °C in O2 or H2O for 20 min. N2O direct oxidation with re-oxidation processes was confirmed that SiC/SiO2 interface properties and dielectric stability have better performance than with other conventional oxidation processes. This oxidation technique is expected to improve gate dielectric stability for application to SiC MOS devices; in particular, it can be used to obtain high-quality SiC/SiO2 interface properties.
- 키워드
- 4H-SiC, Interface trap density, MOS capacitor, N O direct oxidation 2, POA, Re-oxidation, XPS
- KSP 제안 키워드
- 4H-SiC, Capacitance-voltage, Dielectric stability, Direct oxidation, Effective dielectric, Flat-band voltage, High-purity, High-quality, Interface characteristics, MOS capacitor, MOS devices