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Conference Paper Via-holes Etching on SiC Substrate Characterized by High Etch Selectivity with GaN Epilayer
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Authors
Byoung-Gue Min, Kyu-Jun Cho, Hyung Sup Yoon, Haecheon Kim, Ho-Kyun Ahn, Jong-Won Lim
Issue Date
2017-06
Citation
한국전기전자재료학회 학술 대회 (하계) 2017, pp.1-1
Publisher
한국전기전자재료학회
Language
English
Type
Conference Paper
KSP Keywords
Etch Selectivity, GaN epilayer, SiC substrate
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