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학술지 1-μm Short-Channel Oxide Thin-Film Transistors With Triangular Gate Spacer
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저자
최지훈, 양종헌, 피재은, 황치영, 최경희, 김희옥, 권오상, 황치선
발행일
201710
출처
IEEE Electron Device Letters, v.38 no.10, pp.1398-1400
ISSN
0741-3106
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LED.2017.2748102
협약과제
17MF1200, 디지털 홀로그래픽 테이블탑형 단말 기술 개발, 김진웅
초록
In this letter, high-performance back-channel etch type oxide thin-film transistors (TFTs) with very narrow channel length, 1μ m , are presented. To cover the steep slope at the dry-etched gate pattern edge with a thin gate insulator, a triangular-shaped gate spacer was introduced. A 1- μm short-channel oxide TFT is particularly adaptable to next-generation display applications requiring very high resolution. The field-effect mobility (μFE) , subthreshold slope, turn-on voltage (V-on) , and the on/off ratio were 55.2 cm2/Vs, 0.11 V/decade, 0.13 V, and 6.8× 109 , respectively.
키워드
1 關m, oxide TFT, short channel, triangular gate spacer
KSP 제안 키워드
3 V, Channel Length, Display applications, Gate insulator, High performance, Narrow channel, Next-generation, Oxide TFTs, Short channel, Subthreshold slope(SS), Thin-Film Transistor(TFT)