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학술지 Total Ionizing Dose Responses of GaN-based HEMTs with Different Channel Thicknesses and MOSHEMTs with Epitaxial MgCaO as Gate Dielectric
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저자
Maruf A. Bhuiyan, Hong Zhou, 장성재, Xiabing Lou, Xian Gong, Rong Jiang, Huiqi Gong, En Xia Zhang, 원철호, 임종원, 이정희, Roy G. Gordon, Robert A. Reed, Daniel M. Fleetwood, Peide Ye, Tso-Ping Ma
발행일
201801
출처
IEEE Transactions on Nuclear Science, v.65 no.1, pp.46-52
ISSN
0018-9499
출판사
IEEE
DOI
https://dx.doi.org/10.1109/TNS.2017.2774928
협약과제
17HB2400, 고효율 GaN 기반 기지국/단말기용 핵심부품 및 모듈 개발, 임종원
초록
The radiation hardness of AlGaN/GaN high-electron-mobility transistors (HEMTs) is found to improve with increasing GaN channel thickness. Epitaxial MgCaO shows promise as a radiation-tolerant gate dielectric, with only small shifts in operating parameters of metal-oxide-semiconductor HEMTs observed at doses up to 1 Mrad(SiO2). Bias-induced electron trapping and radiation-induced-hole trapping can occur in the MgCaO, depending on the applied bias during stress and/or irradiation. AC transconductance measurements are used to help understand charge trapping in these devices.
키워드
Atomic layer epitaxy, gallium nitride (GaN) high-electron-mobility transistor (HEMT), metal-oxide-semi-conductor HEMT (MOSHEMT), MgCaO, oxide traps, radiation
KSP 제안 키워드
Atomic layer epitaxy, Channel thickness, Charge trapping, GaN-Based, High electron mobility transistor(HEMT), Metal-oxide(MOX), Radiation hardness, Radiation-induced, applied bias, electron trapping, gate dielectric