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학술지 Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment
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저자
강민식, Servin Rathi, 이인열, 이리준, Muhammad Atif Khan, 임동식, 이윤태, 박진우, 윤선진, 윤두협, 준충삼, 김길호
발행일
201701
출처
Nanoscale, v.9 no.4, pp.1645-1652
ISSN
2040-3364
출판사
Royal Society of Chemistry (RSC)
DOI
https://dx.doi.org/10.1039/c6nr08467b
협약과제
17HB1300, 차세대 신기능 스마트디바이스 플랫폼을 위한 대면적 이차원소재 및 소자 원천기술 개발, 윤선진
초록
HfSe2 field effect transistors are systematically studied in order to selectively tune their electrical properties by optimizing layer thickness and oxygen plasma treatment. The optimized plasma-treated HfSe2 field effect transistors showed a high on/off ratio improvement of four orders of magnitude, from 27 to 105, a field effect mobility increase from 2.16 to 3.04 cm2 V-1 s-1, a subthreshold swing improvement from 30.6 to 4.8 V dec-1, and a positive threshold voltage shift between depletion mode and enhancement mode, from -7.02 to 11.5 V. The plasma-treated HfSe2 photodetector also demonstrates a reasonable photoresponsivity from the visible to the near-infrared region of light.
KSP 제안 키워드
Field effect transistors(Substrate temperature), First Stokes(S1), Near-Infrared(NIR), Near-infrared region, Orders of magnitude, Plasma-treated, Threshold voltage shift, depletion mode, electrical properties(I-V curve), enhancement-mode, field-effect mobility