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Journal Article A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology
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Authors
Dong-Hwan Shin, In-Bok Yom, Dong-Wook Kim
Issue Date
2017-10
Citation
Journal of Electromagnetic Engineering and Science, v.17, no.4, pp.178-180
ISSN
2234-8409
Publisher
한국전자파학회 (KIEES)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.26866/jees.2017.17.4.178
Abstract
This study presents a 2-20 GHz monolithic distributed power amplifier (DPA) using a 0.25 μm AlGaN/GaN on SiC high electron mobility transistor (HEMT) technology. The gate width of the HEMT was selected after considering the input capacitance of the unit cell that guarantees decade bandwidth. To achieve high output power using small transistors, a 12-stage DPA was designed with a nonuniform drain line impedance to provide optimal output power matching. The maximum operating frequency of the proposed DPA is above 20 GHz, which is higher than those of other DPAs manufactured with the same gate-length process. The measured output power and power-added efficiency of the DPA monolithic microwave integrated circuit (MMIC) are 35.3-38.6 dBm and 11.4%-31%, respectively, for 2-20 GHz.
KSP Keywords
GaN HEMT technology, GaN on SiC, Gate Width, High-electron mobility transistor(HEMT), Line impedance, Measured output, Microwave Integrated Circuits(MICs), Microwave monolithic integrated circuits(MMIC), Power added efficiency(PAE), Power amplifier MMIC, Unit cell
This work is distributed under the term of Creative Commons License (CCL)
(CC BY NC)
CC BY NC