상세정보
학술지
A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology
- 발행일
- 201710
- 출처
- Journal of Electromagnetic Engineering and Science, v.17 no.4, pp.178-180
- ISSN
- 2234-8409
- 출판사
- 한국전자파학회 (KIEES)
- 협약과제
- 17JR1200, MMIC 기반 X-band GaN SSPA 상세설계 및 인증, 염인복
- 초록
- This study presents a 2-20 GHz monolithic distributed power amplifier (DPA) using a 0.25 μm AlGaN/GaN on SiC high electron mobility transistor (HEMT) technology. The gate width of the HEMT was selected after considering the input capacitance of the unit cell that guarantees decade bandwidth. To achieve high output power using small transistors, a 12-stage DPA was designed with a nonuniform drain line impedance to provide optimal output power matching. The maximum operating frequency of the proposed DPA is above 20 GHz, which is higher than those of other DPAs manufactured with the same gate-length process. The measured output power and power-added efficiency of the DPA monolithic microwave integrated circuit (MMIC) are 35.3-38.6 dBm and 11.4%-31%, respectively, for 2-20 GHz.
- 키워드
- 0.25 關m AlGaN/GaN HEMT, Decade bandwidth, Distributed power amplifier, High power amplifier, MMIC
- KSP 제안 키워드
- AlGaN/GaN HEMTs, GaN HEMT technology, GaN on SiC, Gate Width, High electron mobility transistor(HEMT), High output power, High power amplifier(HPA), Line Impedance, Measured output, Microwave monolithic integrated circuits(MMIC), Power added efficiency(PAE)