ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술대회 A 21.9-dB Gain 18.9-35.9-GHz Low Noise Amplifier Using InGaAs E-mode 0.15-um pHEMT Technology
Cited 6 time in scopus Download 5 time Share share facebook twitter linkedin kakaostory
저자
공선우, 이희동, 김철호, 박봉혁
발행일
201711
출처
Asia-Pacific Microwave Conference (APMC) 2017, pp.1203-1206
DOI
https://dx.doi.org/10.1109/APMC.2017.8251675
협약과제
17HF1700, 5G 이동통신용 밀리미터파(40GHz 이하) 빔포밍 부품 개발, 김광선
초록
We propose a millimeter-wave (mm-wave) InGaAs enhancement-mode (E-mode) 0.15-um pHEMT low-noise amplifier (LNA). The LNA achieves 21.9-dB gain with simulation results of 2.19-dB noise figure (NF) and 9.9-dBm P1dB using 3-V power supply as it consumes 9 mA. The bandwidth of the LNA is 17 GHz (from 18.9 GHz to 35.9 GHz) and the fractional bandwidth (FBW) is 62 %.
키워드
InGaAs, low noise amplifier, pHEMT, transformer
KSP 제안 키워드
17 GHz, 5.9 GHz, E-mode, Fractional Bandwidth(FBW), Noise Figure(NF), enhancement-mode, low noise amplifier(LNA), power supply, simulation results