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학술지 Power Semiconductor SMD Package Embedded in Multilayered Ceramic for Low Switching Loss
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정동윤, 장현규, 김민기, 전치훈, 박준보, 이현수, 박종문, 고상춘
ETRI Journal, v.39 no.6, pp.866-873
한국전자통신연구원 (ETRI)
16MB2400, 차세대 고효율 3D 융합 전력변환모듈, 고상춘
We propose a multilayered-substrate-based power semiconductor discrete device package for a low switching loss and high heat dissipation. To verify the proposed package, cost-effective, low-temperature co-fired ceramic, multilayered substrates are used. A bare die is attached to an embedded cavity of the multilayered substrate. Because the height of the pad on the top plane of the die and the signal line on the substrate are the same, the length of the bond wires can be shortened. A large number of thermal vias with a high thermal conductivity are embedded in the multilayered substrate to increase the heat dissipation rate of the package. The packaged silicon carbide Schottky barrier diode satisfies the reliability testing of a high-temperature storage life and temperature humidity bias. At 175 C, the forward current is 7 A at a forward voltage of 1.13 V, and the reverse leakage current is below 100 μA up to a reverse voltage of 980 V. The measured maximum reverse current (I ), reverse recovery time (T ), and reverse recovery charge (Q ) are 2.4 A, 16.6 ns, and 19.92 nC, respectively, at a reverse voltage of 300 V and di/dt equal to 300 A/μs. RM rr rr
Low-temperature co-fired ceramic, Multilayered substrate, Power semiconductor, Reliability, Schottky barrier diode, Switching loss
KSP 제안 키워드
3 V, Embedded Cavity, Forward current, Forward voltage, Heat dissipation rate, High temperature storage, Low Temperature Cofired Ceramic(LTCC), Low temperature(LT), Power semiconductor, Reverse leakage current, Reverse voltage
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