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학술지 Gas Molecule Sensing of Van Der Waals Tunnel Field Effect Transistors
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저자
최홍규, 박재성, 명노준, 김호종, 최진식, 최영규, 황치영, 김진태, 박세린, 이윤식, 장수경, 박희철, 황찬용, 최춘기, 유영준
발행일
201710
출처
Nanoscale, v.9 no.47, pp.18644-18650
ISSN
2040-3364
출판사
Royal Society of Chemistry (RSC)
DOI
https://dx.doi.org/10.1039/c7nr05712a
협약과제
17HB1300, 차세대 신기능 스마트디바이스 플랫폼을 위한 대면적 이차원소재 및 소자 원천기술 개발, 윤선진
초록
van der Waals (vdW) heterostructures with two-dimensional (2D) crystals such as graphene, hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDCs) allow us to demonstrate atomically thin field-effect transistors (FETs), photodetectors (PDs) and photovoltaic devices capable of higher performance and greater stability levels than conventional devices. Although there have been studies of gas molecule sensing with 2D crystal channels, vdW heterostructures based on 2D crystals have not been employed thus far. Here, utilizing graphene/WS2/graphene (G/WS2/G) vdW heterostructure tunnel FETs, we demonstrate the rectification behavior of the sensitivity signal by tuning the WS2 potential barriers as a function of the gas molecule concentration and devise a fingerprint map of the sensitivity variation corresponding to an individual ratio of two different molecules in a gas mixture. Because the separation of different gas molecule concentrations from gas mixtures is in high demand in the gas-sensing research field, this result will greatly assist in the progress on selective gas sensing.
KSP 제안 키워드
Boron nitride(BN), Conventional devices, Field effect transistors(Substrate temperature), Field-effect transistors(FETs), Gas mixture, Gas molecule sensing, Gas sensing, Hexagonal boron nitride(h-BN), Higher performance, Potential barrier, Sensitivity variation