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학술지 Reconfigurable Yagi-Uda Antenna based on a Silicon Reflector with a Solid-State Plasma
Cited 8 time in scopus Download 4 time Share share facebook twitter linkedin kakaostory
저자
김다진, 박장순, 김철호, 허재, 김충기, 조영균, 고준봉, 박봉혁, 김동호, 최양규
발행일
201712
출처
Scientific Reports, v.7, pp.1-8
ISSN
2045-2322
출판사
Nature Publishing Group
DOI
https://dx.doi.org/10.1038/s41598-017-17425-8
협약과제
17HF1400, 차세대 무선통신용 반도체 기반 스마트 안테나 기술 개발, 현석봉
초록
This paper describes the fabrication and characterization of a reconfigurable Yagi-Uda antenna based on a silicon reflector with a solid-state plasma. The silicon reflector, composed of serially connected p-i-n diodes, forms a highly dense solid-state plasma by injecting electrons and holes into the intrinsic region. When this plasma silicon reflector is turned on, the front-realized gain of the antenna increases by more than 2 dBi beyond 5.3 GHz. To achieve the large gain increment, the structure of the antenna is carefully designed with the aid of semiconductor device simulation and antenna simulation. By using an aluminum nitride (AlN) substrate with high thermal conductivity, self-heating effects from the high forward current in the p-i-n diode are efficiently suppressed. By comparing the antenna simulation data and the measurement data, we estimated the conductivity of the plasma silicon reflector in the on-state to be between 104 and 105 S/m. With these figures, silicon material with its technology is an attractive tunable material for a reconfigurable antenna, which has attracted substantial interest from many areas, such as internet of things (IoT) applications, wireless network security, cognitive radio, and mobile and satellite communications as well as from multiple-input-multiple-output (MIMO) systems.
KSP 제안 키워드
5.3 gHz, Aluminum Nitride(AlN), Antenna Simulation, Forward current, Gain of the Antenna, Internet of thing(IoT), Large gain, PIN Diode, Reconfigurable antenna, Self-heating effect(SHE), Semiconductor device simulation