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Journal Article
Effects of Er-Doping on Amorphous InZnSnO/InZnSnO:Er Double-Channel Thin-Film Transistors
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- Authors
- Ji-Woong Yang, Yun-Been Na, Jae-Heon Shin, Chan-Hwa Hong, Woo-Hyung Seo, Kyung-Hyun Kim, Chang-Woo Song, Sang-Hun Song, Hyuck-In Kwon, Woo-Seok Cheong
- Issue Date
- 2017-05
- Citation
- Journal of Nanoscience and Nanotechnology, v.17, no.5, pp.3415-3419
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP)
- Language
- English
- Type
- Journal Article
- Abstract
- We study the effects of Er-doping on the electrical performances and stabilities of amorphous InZn-SnO(IZTO)/IZTO:Er double-channel thin-film transistors (TFTs). Compared to conventional IZTO single-channel TFTs, the IZTO(front)/IZTO:Er(back) double-channel TFTs exhibits higher field-effect mobility and improved stability under both positive and negative bias stresses. From the X-ray photoelectron spectroscopy for the double channel, we observe that Er doping contributes to an enhancement of the oxygen bonding and a reduction of oxygen vacancies in the IZTO thin-film. These results show that the Er can be an effective carrier suppressor in IZTO-based TFTs.
- KSP Keywords
- Er doping, Negative bias, Oxygen vacancy, Positive and negative, Reduction of oxygen, Single Channel, Thin-Film Transistor(TFT), X-Ray Photoelectron Spectroscopy, double-channel, field-effect mobility, improved stability