We study the effects of Er-doping on the electrical performances and stabilities of amorphous InZn-SnO(IZTO)/IZTO:Er double-channel thin-film transistors (TFTs). Compared to conventional IZTO single-channel TFTs, the IZTO(front)/IZTO:Er(back) double-channel TFTs exhibits higher field-effect mobility and improved stability under both positive and negative bias stresses. From the X-ray photoelectron spectroscopy for the double channel, we observe that Er doping contributes to an enhancement of the oxygen bonding and a reduction of oxygen vacancies in the IZTO thin-film. These results show that the Er can be an effective carrier suppressor in IZTO-based TFTs.
KSP Keywords
Er doping, Negative bias, Oxygen vacancy, Positive and negative, Reduction of oxygen, Single Channel, Thin-Film Transistor(TFT), X-Ray Photoelectron Spectroscopy, double-channel, field-effect mobility, improved stability
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