상세정보
학술지
Effects of Er-Doping on Amorphous InZnSnO/InZnSnO : Er Double-Channel Thin-Film Transistors
- 발행일
- 201705
- 출처
- Journal of Nanoscience and Nanotechnology, v.17 no.5, pp.3415-3419
- ISSN
- 1533-4880
- 출판사
- American Scientific Publishers (ASP)
- 협약과제
- 15PB2600, 대면적 투명플렉시블 디스플레이 구현을 위한 60인치이상, UD급, 투과도 40%인 패널/모듈 기술개발, 정우석
- 초록
- We study the effects of Er-doping on the electrical performances and stabilities of amorphous InZn-SnO(IZTO)/IZTO:Er double-channel thin-film transistors (TFTs). Compared to conventional IZTO single-channel TFTs, the IZTO(front)/IZTO:Er(back) double-channel TFTs exhibits higher field-effect mobility and improved stability under both positive and negative bias stresses. From the X-ray photoelectron spectroscopy for the double channel, we observe that Er doping contributes to an enhancement of the oxygen bonding and a reduction of oxygen vacancies in the IZTO thin-film. These results show that the Er can be an effective carrier suppressor in IZTO-based TFTs.
- 키워드
- A-IZTO TFT, Doped Er, Mobility, Stability.
- KSP 제안 키워드
- Er doping, Improved stability, Negative bias, Oxygen vacancies, Positive and negative, Reduction of oxygen, Single Channel, Thin-Film Transistor(TFT), X-ray Photoelectron Spectroscopy, double-channel, field-effect mobility