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학술지 Large Size of Capacitive Window-Unified TSP Using by Contact Hole Type as an Insulator
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저자
서우형, 홍찬화, 양지웅, 나윤빈, 권혁인, 정우석
발행일
201705
출처
Journal of Nanoscience and Nanotechnology, v.17 no.5, pp.3089-3091
ISSN
1533-4880
출판사
American Scientific Publishers (ASP)
DOI
https://dx.doi.org/10.1166/jnn.2017.14068
협약과제
15PB3900, 하이브리드 전극을 활용한 차세대 멀티터치 IC 및 모듈 개발, 정우석
초록
We developed 30?꿎?? window-unified capacitive touch screen panel (G2-TSP), where the transparent electrodes for sensing and driving lines were directly patterned on the glass. In this study, indexmatched ITO as the main electrode was fabricated using by sputtering system which had sheet resistance of 30 ohm/square and transmittance of 88.6% at wavelength of 550 nm. We used SiOC of contact-hole type as a dielectric layer for high deposition rate and etching selectivity. Finally, we developed copper material (110 nm-thick) as bridge and bezel metal with sheet resistance of 2 ohm/square. From these processes, we successfully fabricated the 30 inch G2 TSP with noshort and open parts of TSP-cells. We fabricated G2 TSP with the wet-etching process, linearity of 0.86 mm and accuracy of 0.83 mm have been achieved.
키워드
Cu, ITO, SiOC, Touch Screen Panel
KSP 제안 키워드
Capacitive Touch screen, Contact hole, Etching process, Etching selectivity, High deposition rate, Hole type, Sputtering system, Wet etching, copper material, dielectric layer, large size