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학술지 Photo-Conductive Detection of Continuous THz Waves Via Manipulated Ultrafast Process in Nanostructures
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저자
문기원, 이의수, 이일민, 박동우, 박경현
발행일
201801
출처
Applied Physics Letters, v.112 no.3, pp.1-5
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.5008790
협약과제
17ZR1500, 튜너블 테라헤르츠 트랜시버 기술 개발, 박경현
초록
Time-domain and frequency-domain terahertz (THz) spectroscopy systems often use materials fabricated with exotic and expensive methods that intentionally introduce defects to meet short carrier lifetime requirements. In this study, we demonstrate the development of a nano-photomixer that meets response speed requirements without using defect-incorporated, low-temperature-grown (LTG) semiconductors. Instead, we utilized a thin InGaAs layer grown on a semi-insulating InP substrate by metal-organic chemical vapor deposition (MOCVD) combined with nano-electrodes to manipulate local ultrafast photo-carrier dynamics via a carefully designed field-enhancement and plasmon effect. The developed nano-structured photomixer can detect continuous-wave THz radiation up to a frequency of 2 THz with a peak carrier collection efficiency of 5%, which is approximately 10 times better than the reference efficiency of 0.4%. The better efficiency results from the high carrier mobility of the MOCVD-grown InGaAs thin layer with the coincidence of near-field and plasmon-field distributions in the nano-structure. Our result not only provides a generally applicable methodology for manipulating ultrafast carrier dynamics by means of nano-photonic techniques to break the trade-off relation between the carrier lifetime and mobility in typical LTG semiconductors but also contributes to mass-producible photo-conductive THz detectors to facilitate the widespread application of THz technology.
KSP 제안 키워드
Collection efficiency, InP substrate, Low temperature(LT), Metalorganic chemical vapor deposition, Nano-electrodes, Nano-structured, Photo-carrier, Photo-conductive, Semi-Insulating, THz detectors, THz radiation