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Solution-Processed Flexible NiO Resistive Random Access Memory Device
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- Authors
- Soo-Jung Kim, Heon Lee, Sung-Hoon Hong
- Issue Date
- 2018-04
- Citation
- Solid-State Electronics, v.142, pp.56-61
- ISSN
- 0038-1101
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Project Code
- 16MB1500, 3-dimensional creative materials for high performance flexible ICT devices, Lee Myung Lae
- Abstract
- Non-volatile memories (NVMs) using nanocrystals (NCs) as active materials can be applied to soft electronic devices requiring a low-temperature process because NCs do not require a heat treatment process for crystallization. In addition, memory devices can be implemented simply by using a patterning technique using a solution process. In this study, a flexible NiO ReRAM device was fabricated using a simple NC patterning method that controls the capillary force and dewetting of a NiO NC solution at low temperature. The switching behavior of a NiO NC based memory was clearly observed by conductive atomic force microscopy (c-AFM).
- KSP Keywords
- Active materials, Atomic force microscope(AFM), Heat Treatment Process, Low temperature(LT), Low-temperature process, Non-Volatile Memory(NVM), Patterning technique, Resistive Random Access Memory(RRAM), Solution-processed, Switching behavior, c-AFM