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Conference Paper
Mechanical Stress Effects on Device Properties in GaN-based HEMTs
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- Authors
- S.-J. Chang, H.-W. Jung, M.J. Shin, J.-W. Do, K.J. Cho, H.S. Yoon, B.-G. Min, H. Kim, J.-W. Lim
- Issue Date
- 2018-02
- Citation
- 한국 반도체 학술 대회 (KCS) 2018, pp.648-648
- Language
- English
- Type
- Conference Paper
- KSP Keywords
- Device properties, GaN-Based, mechanical stress, stress effects