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학술지 Highly Stable AlInZnSnO and InZnO Double-Layer Oxide Thin-Film Transistors With Mobility Over 50 cm2/V·s for High-Speed Operation
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저자
양종헌, 최지훈, 조성행, 피재은, 김희옥, 황치선, 박기찬, 유승협
발행일
201804
출처
IEEE Electron Device Letters, v.39 no.4, pp.508-511
ISSN
0741-3106
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LED.2018.2805705
협약과제
17PB3800, 6G용 UD 디스플레이급 고이동도 고신뢰성 산화물 TFT 확보를 위한 급속 광소결 장비 기술 개발, 양종헌
초록
We present high-mobility back channel etch Al-In-Zn-Sn-O/In-Zn-O (IZO) double-layer channel thin-film transistors (TFTs). The field-effect mobility of 53.2, threshold voltage of 0.5 V, and subthreshold swing of 0.15 V/decade were obtained with a thin IZO-inserted double-layer channel TFT. The positive bias stability was improved with an IZO-inserted double-layer channel. We fabricated 13-stage ring oscillators, which exhibited an oscillating frequency of 296 kHz at. These results demonstrate that the proposed double-layer channel oxide TFT can be used for demanding applications such as backplane devices for ultrahigh resolution display.
키워드
AlInZnSnO, back channel etch, double layer, high mobility, InZnO, oxide TFT, Thin film transistor
KSP 제안 키워드
Al-In, Double layer, High Mobility, Highly stable, In-Zn-O, In-Zn-Sn-O, Oscillating frequency, Oxide TFTs, Positive bias, Thin-Film Transistor(TFT), Ultra-high resolution