상세정보
학술지
Highly Stable AlInZnSnO and InZnO Double-Layer Oxide Thin-Film Transistors With Mobility Over 50 cm2/V·s for High-Speed Operation
- 발행일
- 201804
- 출처
- IEEE Electron Device Letters, v.39 no.4, pp.508-511
- ISSN
- 0741-3106
- 출판사
- IEEE
- 협약과제
- 17PB3800, 6G용 UD 디스플레이급 고이동도 고신뢰성 산화물 TFT 확보를 위한 급속 광소결 장비 기술 개발, 양종헌
- 초록
- We present high-mobility back channel etch Al-In-Zn-Sn-O/In-Zn-O (IZO) double-layer channel thin-film transistors (TFTs). The field-effect mobility of 53.2, threshold voltage of 0.5 V, and subthreshold swing of 0.15 V/decade were obtained with a thin IZO-inserted double-layer channel TFT. The positive bias stability was improved with an IZO-inserted double-layer channel. We fabricated 13-stage ring oscillators, which exhibited an oscillating frequency of 296 kHz at. These results demonstrate that the proposed double-layer channel oxide TFT can be used for demanding applications such as backplane devices for ultrahigh resolution display.
- 키워드
- AlInZnSnO, back channel etch, double layer, high mobility, InZnO, oxide TFT, Thin film transistor
- KSP 제안 키워드
- Al-In, Double layer, High Mobility, Highly stable, In-Zn-O, In-Zn-Sn-O, Oscillating frequency, Oxide TFTs, Positive bias, Thin-Film Transistor(TFT), Ultra-high resolution