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학술지 Na-Cation-Assisted Exfoliation of MX2 (M = Mo, W; X = S, Se) Nanosheets in an Aqueous Medium with the Aid of a Polymeric Surfactant for Flexible Polymer-Nanocomposite Memory Applications
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저자
연창봉, 윤선진, 양준재, 윤두협, 임정욱
발행일
201801
출처
Small, v.14 no.2, pp.1-10
ISSN
1613-6810
출판사
Wiley-Blackwell
DOI
https://dx.doi.org/10.1002/smll.201702747
협약과제
17HB1300, 차세대 신기능 스마트디바이스 플랫폼을 위한 대면적 이차원소재 및 소자 원천기술 개발, 윤선진
초록
2D nanosheets of transition metal dichalcogenides (TMDCs) have been attracting attention due to their sizable band gap. Facile and effective Na-cation-assisted exfoliation of TMDC (MX2, M = Mo, W; X = S, Se) nanosheets in an aqueous medium and their application as a composite filler in a polyvinyl alcohol (PVA) matrix are explored in this work. The presence of Na cations is highly beneficial for exfoliating defect-free and few-layer MX2 nanosheets in water in the presence of small-sized micelles of polymeric surfactant, and significantly elevates the exfoliation yield by more than one order of magnitude compared to a conventional surfactant-assisted exfoliation. The strategy suggested in this work is very advantageous compared to both Li cation intercalation in organic solvents and conventional low-yield surfactant-assisted exfoliations. As an application of the exfoliated nanosheets, the fabrication of memory devices with the configuration of Ga-doped ZnO/MX2?밣VA/Ag is demonstrated, and they exhibit bistable and write-once-read-many-times resistive switching behavior with a high ON/OFF current ratio of 3 × 103 at ?닋1.0 V (for WS2) and 2.0 V (for MoS2). Furthermore, MX2?밣VA nanocomposite fibrous films and mats are successfully fabricated using an electrospinning technique, which can expand the use of TMDC nanofillers in applications involving highly flexible polymer-based MX2 composites.
키워드
electrospun mats, memory devices, Na cations, nanocomposites, transition metal dichalcogenide
KSP 제안 키워드
2D nanosheets, Band gap, Composite filler, Conventional surfactant, Defect-free, Electrospun mats, Flexible polymer, Ga-doped ZnO, Highly flexible, Memory applications, ON/OFF current ratio