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학술대회 Field Emission Performance of Boron Nitride Nanotube Emitters According to Vacuum Pressure
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저자
윤기남, 정진우, 강준태, 박소라, 김재우, 송윤호, 한준수, 이철진
발행일
201807
출처
International Vacuum Nanoelectronics Conference (IVNC) 2018, pp.1-2
DOI
https://dx.doi.org/10.1109/IVNC.2018.8520167
협약과제
18JB1700, 신개념의 디지털 엑스선 소스와 이를 활용한 차세대 무압박, 무고통 유방 CT 기술 개발, 송윤호
초록
Field emission performance of boron nitride nanotube (BNNT) fabricated by simple filtration-transfer method, were evaluated according to vacuum pressure to estimate its potential use for robust electron sources. Even though there is little change in the current density-electric field characteristics, the stability test for a relatively long time shows somewhat large degradation at a vacuum pressure of over 10-5 Torr. To investigate a key factor of the degradation, we changed the vacuum ambient from air to argon. Under argon ambient condition, the current degradation and fluctuation rates were almost the same as those measured under air ambient at a vacuum pressure of 10-5 Torr. Consequently, ion bombardment dominantly induced the current degradation of the BNNT field emitters rather than oxidation effect.
키워드
Boron nitride nanotube, cold cathode, field emitter, film emitter
KSP 제안 키워드
Argon ambient, Boron nitride(BN), Boron nitride nanotube, Field emission performance, Key factor, Long Time, Pressure field, Transfer method, Vacuum pressure, air ambient, ambient conditions