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학술지 Interband Transitions in Monolayer and Few-Layer WSe2 Probed Using Photoexcited Charge Collection Spectroscopy
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저자
최경희, 이기문, 유상혁, 오세훈, 최형준, 배희선, 임성일
발행일
201806
출처
ACS Applied Materials & Interfaces, v.10 no.24, pp.20213-20218
ISSN
1944-8244
출판사
American Chemical Society(ACS)
DOI
https://dx.doi.org/10.1021/acsami.8b04056
협약과제
18MB1200, 모바일 완전입체 단말 및 콘텐츠 기술 개발, 황치선
초록
Transition-metal dichalcogenides are currently under rigorous investigation because of their distinct layer-dependent physical properties originating from the corresponding evolution of the band structure. Here, we report the highly resolved probing of layer-dependent band structure evolution for WSe2 using photoexcited charge collection spectroscopy (PECCS). Monolayer, few-layer, and multilayer WSe2 can be probed in top-gate field-effect transistor platforms, and their interband transitions are efficiently observed. Our theoretical calculations show a great coincidence with the PECCS results, proving that the indirect ?뙂-K and ?뙂-{\\lambda} transitions as well as the direct K-K transition are clearly resolved in multilayer WSe2 by PECCS.
키워드
field-effect transistor, first-principles calculation, interband transition, transition-metal dichalcogenide, WSe 2
KSP 제안 키워드
Field-effect transistors(FETs), First-principles calculations, Interband transitions, Physical Properties, Structure evolution, Theoretical calculation, WSe 2, band structure, few-layer, gate field, photoexcited charge collection spectroscopy(PECCS)