ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 2단계 게이트 리세스 방법으로 제작한 100 nm mHEMT 소자의 DC 및 RF 특성
Cited - time in scopus Download 9 time Share share facebook twitter linkedin kakaostory
저자
윤형섭, 민병규, 장성재, 정현욱, 이종민, 김성일, 장우진, 강동민, 임종원, 김완식, 정주용, 김종필, 서미희, 김소수
발행일
201904
출처
한국전자파학회논문지, v.30 no.4, pp.282-285
ISSN
1226-3133
출판사
한국전자파학회 (KIEES)
DOI
https://dx.doi.org/10.5515/KJKIEES.2019.30.4.282
협약과제
19DB1500, W-대역 탐지용 송수신기 집적화 기술을 위한 W-대역 MMIC Chip 및 공정개발, 강동민
초록
A 100-nm gate-length metamorphic high electron mobility transistor(mHEMT) with a T-shaped gate was fabricated using a two-step gate recess and characterized for DC and microwave performance. The mHEMT device exhibited DC output characteristics having drain current(Idss), an extrinsic transconductance(gm) of 1,090 mS/mm and a threshold voltage(Vth) of ?0.65 V. The fT and fmax obtained for the 100-nm mHEMT device were 190 and 260 GHz, respectively. The developed mHEMT will be applied in fabricating W-band monolithic microwave integrated circuits(MMICs).
KSP 제안 키워드
60 GHz, DC output, Drain current, Gate recess, High electron mobility transistor(HEMT), Microwave monolithic integrated circuits(MMIC), T-shaped gate, Two-Step, W-band, metamorphic high electron mobility transistor(mHEMT), microwave integrated circuit