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학술지 Improved Stability of Atomic Layer Deposited ZnO Thin Film Transistor by Intercycle Oxidation
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저자
오힘찬, 박상희, 유민기, 황치선, 양신혁, 권오상
발행일
201204
출처
ETRI Journal, v.34 no.2, pp.280-283
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.12.0211.0186
협약과제
11MB2300, 고품위 Plastic AMOLED 원천기술 개발, 유병곤
초록
By inserting H 2O treatment steps during atomic layer deposition of a ZnO layer, the turn-on voltage shift from negative bias stress (NBS) under illumination was reduced considerably compared to that of a device that has a continuously grown ZnO layer without any treatment steps. Meanwhile, treatment steps without introducing reactive gases, and simply staying under a low working pressure, aggravated the instability under illuminated NBS due to an increase of oxygen vacancy concentration in the ZnO layer. From the experiment results, additional oxidation of the ZnO channel layer is proven to be effective in improving the stability against illuminated NBS. © 2012 ETRI.
키워드
Negative bias stress, Thin film transistor, ZnO
KSP 제안 키워드
Atomic Layer Deposition, Channel layer, Experiment results, Improved stability, Negative bias stress, Oxygen vacancy concentration, Thin-Film Transistor(TFT), Turn-on voltage, Voltage shift, Working pressure, ZnO layer