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학술지 Influence of Hydrogen Incorporation on Conductivity and Work Function of VO2 Nanowires
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저자
김재은, 신중열, 장현석, 전준우, 홍원기, 김혜진, 최준희, 김규태, 김병훈, 박종혁, 최영진, 박정영
발행일
201903
출처
Nanoscale, v.11 no.10, pp.4219-4225
ISSN
2040-3364
출판사
Royal Society of Chemistry (RSC)
DOI
https://dx.doi.org/10.1039/c9nr00245f
협약과제
18PB5100, 대면적 그래핀 기판을 이용한 저비용, 고품위의 III-V 나노와이어 발광소자 개발, 박종혁
초록
We report improved conductance by reducing the work function via incorporation of hydrogen into VO 2 nanowires. The VO 2 nanowires were prepared using the chemical vapor deposition method with V 2 O 5 powder on silicon substrates at 850 °C. Hydrogenation was carried out using the high-pressure hydrogenation method. Raman spectroscopy confirmed that the incorporated hydrogen atoms resulted in a change in the lattice constant of the VO 2 nanowires (NWs). To quantitatively measure the work function of the nanowires, Kelvin probe force microscopy (KPFM) was employed at ambient conditions. We found that the work function decreased with increasing H 2 pressure, which also resulted in increased conductance. This is associated with hydrogen diffused into the VO 2 that acts as a donor to elevate the Fermi level, which was also confirmed by KPFM. From these results, tuning of the reversible electrical properties of VO 2 NWs, including the conductance and work function, can be achieved by incorporating hydrogen at relatively moderate temperatures.
KSP 제안 키워드
Chemical vapor deposition method, Fermi level, H 2, Hydrogen atoms, Hydrogen incorporation, Kelvin Probe force microscopy, Lattice constants, Raman spectroscopy, Silicon substrate, VO 2, Work Function